Analysis of Phenomenon at Quantum Capacitance Limit of SNWFET using FETToy

Manish Mishra, Abhinav Shukla, UN Tripathi, Harsha Gupta

SNWFET, Quantum Capacitance, Non-degenerate, Full-degenerate, SiO2, HFO2, FETToy.

In The proposed paper several interesting phenomenon that happens at Quantum Conductance Limit (QCL) like transconductance of One Dimensional-Silicon Nano Wire Field Effect Transistor (1D-SNWFET), mobile electron density and injection velocity is studied and simulated using Fettoy simulation tool. The selected gate material in silicon nanowire field effect transistor is SiO2 with K=3.9 and HFO2 with K=20. A coaxial SNWFET is simulated and the results illustrate the essential physics and peculiarities of 1D nanowire FETs, such as the saturation of channel conductance at full degenerate limit and the saturation of transconductance at the quantum capacitance limit and the full degenerate limit.

10.22161/ijaers/3.9.8