Design and Simulation of InGaAs/GaAsSb single quantum well structure for optical fiber application: Electronic Band Structure, Carrier Transport, and Optical Gain Analysis |
| ( Vol-11,Issue-4,April 2024 ) OPEN ACCESS |
| Author(s): |
Jayprakash Vijay |
| Keywords: |
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Quantum well structure, Optical gain, WDM/DWDM |
| Abstract: |
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This paper explores the electronics and optical gain characteristics of an InGaAs/GaAsSb single quantum well structure designed on a GaAs substrate at room temperature (300 K). The findings indicate that this structure can emit radiation at 1550 nm with a significantly higher gain of approximately 6300/cm, rendering it suitable for optical fiber communication and optics applications such as WDM/DWDM for long-haul fiber transmission. This work contributes to advancing the field of optoelectronics by providing a promising solution for efficient NIR wavelength emission with substantial optical gain. |
| Article Info: |
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Received: 05 Feb 2024, Receive in revised form: 20 Mar 2024, Accepted: 01 Apr 2024, Available online: 10 Apr 2024 |
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- ISSN : 2349-6495(P) | 2456-1908(O)
Advanced Engineering Research and Science