Design of Low Power Data Preserving Flip Flop Using MTCMOS Technique

Guguloth Sreekanth, Neelapala Sai Sruthi, Ravindar Nunavath

Combinational crcuit, flipflop, Leakage power, MTCMOS technique, Sub threshold leakage current.

In order to reduce overall power consumption, a well-known technique is to scale supply voltages. However, to maintain performance, device threshold voltages must scale as well, which will cause sub threshold leakage currents to increase exponentially. The sub threshold voltage has to affect the two parameters one is the delay and other one is the sub threshold leakage current. Smaller the threshold voltage smaller will be delay while larger will be the sub threshold current. Controlling sub threshold leakage has been explored significantly in the literature, especially in the context of reducing leakage currents in burst mode type circuits, where the system spends the majority of the time in an idle standby, or sleep, state where no computation is taking place. MTCMOS or multi-threshold CMOS has been proposed as a very effective technique for reducing leakage currents during the standby by state by utilizing high sleep devices to gate the power supplies of a low logic block. Although MTCMOS circuit techniques are effective for controlling leakage currents in combinational logic, a drawback is that it can cause internal nodes to float, and cannot be directly used in standard memory cells without corrupting stored data. As a result, several researchers have explored possible MTCMOS latch designs that can reduce leakage currents yet maintain state during the standby modes. In this work a data preserving flip flop with reduced leakage power is designed using MTCMOS technique in 90nm technology with the help of CADENCE tool. The simulation results have shown that the leakage power is reduced by 25.70% compared to CMOS flip flop.

10.22161/ijaers.4.1.5