Process sequence optimization and structural analysis of nanoscale heterostructure using compound semiconductors AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47

Jayprakash Vijay, Divya Bharadwaj, Amit Rathi

MBE, Quantum well, Heterostructure, Compound Semiconductor.

In this work, the process sequence optimization for double quantum well structure with compound materials AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47 is discussed for fabrication purposes. The optimized parameters of the sequences are selected based on the literature study of the materials properties, nanoscale engineering and MBE growth parameters. The thickness of the material layers in the heterostructure is under our control. This is a significant benefit of heterostructures for device construction. In order for uniform epitaxial growth of ternary material AlAsSb, InGaAs and GaAsSb, the deposition time is chosen very slow i.e. 0.5 micrometers per hour during the process in the MBE.

Received: 30 Dec 2022, Receive in revised form:04 Feb 2023, Accepted: 22 Feb 2023, Available online: 28 Feb 2023

10.22161/ijaers.102.17