Investigation of Optical Gain Characteristics in GaInP/AlGaInP Nanoscale Heterostructures for Visible Light Emitters

Jayprakash Vijay, Divya Bhardwaj

GaInP/AlGaInP Heterostructures, Quantum Wells, Optical Gain Characteristics, Visible Light Emitters, Band Structure Engineering.

This paper presents the design and optical gain analysis of a Ga0.45In0.55P/AlGaInP nanoscale quantum well heterostructure for visible-light-emitting applications. The proposed structure consists of a 4 nm GaInP quantum well and 10 nm AlGaInP barrier layers grown on a GaAs substrate. The electronic band structure and carrier wave functions are analyzed using the k.p method to investigate carrier confinement and optical transition characteristics. The results confirm the formation of a type-I heterostructure, providing efficient confinement of electrons and holes within the active region. The optical gain spectrum exhibits a peak gain of approximately 4850 cm^-1 at 625 nm (1.985 eV), corresponding to the red region of the visible spectrum. The enhanced gain is attributed to strong quantum confinement and improved electron-hole recombination within the quantum well. The obtained results demonstrate the potential of the proposed GaInP/AlGaInP heterostructure for high-efficiency visible-light emitters, semiconductor lasers, and integrated photonic devices.

Received: 27 Mar 2026, Received in revised form: 20 Apr 2026, Accepted: 24 Apr 2026, Available online: 30 Apr 2026

10.22161/ijaers.134.14