Optimized Modeling of GaInP/AlGaInP Heterostructure for Visible Light: Band Structure, Carrier Transport, and Optical Gain

This study focuses at the creation and examination of heterostructures made of compound semiconductor materials Ga0.6In0.4P/Al0.3Ga0.2In0.5P for visible light application. The study explores the electronic and optical properties for the proposed heterostructure, mainly in relation to optoelectronic applications. Additionally, the structure's response to external parameters variations is modeled to assess its tenability with emission wavelength. Remarkably, the designed structure exhibits robust stability, particularly at ambient temperatures. The solution of the 6×6 Hamiltonian matrix, along with the application of the Luttinger-Kohn model is used to calculate the band structure with consideration to the conduction band.